WebIRF634A FEATURES BVDSS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology RDS (on) = 0.45 Lower Input Capacitance Improved Gate Charge ID = 8.1 A Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 250V TO-220 Lower RDS (ON): 0.327 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings … Webof 7 $GYDQFHG 3RZHU 026) (7 IRF634A FEATURES BVDSS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology RDS (on) = 0.45 Lower Input Capacitance ID = 8.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 250V TO-220 Lower RDS (ON): 0.327 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source
IRF634A Fairchild Semiconductor PDF Field Effect Transistor
WebMar 1, 2024 · Product Code: IRF634A SAMSUNG TRANSISTOR TO-220 (LOT OF 10) Availability: In Stock; 0 reviews / Write a review. IRF634A SAMSUNG TRANSISTOR TO-220 … WebIRF634A. 281Kb / 2P. isc N-Channel MOSFET Transistor. Search Partnumber : Start with "IRF634 A " - Total : 30 ( 1/2 Page) Fairchild Semiconductor. IRF634 B. 859Kb / 10P. 250V … five nights at freddy\\u0027s waw zombies map
IRF634A Datasheet(PDF) - Fairchild Semiconductor
WebMar 14, 2024 · Find many great new & used options and get the best deals for IRF634A SAMSUNG TRANSISTOR TO-220 (LOT OF 5) at the best online prices at eBay! Free … WebIRF634A FAIRCHILD MOSFET 2028017122. Thousands of discounted electronic components in stock. No lead time, ship out right away! Electronic parts, tedss.com your … WebNovember 2001IRF634B/IRFS634B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.1A, 250V, RDS (on) = 0.45 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar, DMOS technology. five nights at freddy\\u0027s web